(China (Mainland))
Product Summary
The 74LVC1G14GW is a high-performance, low-power, low-voltage, Si-gate CMOS device, superior to most advanced CMOS compatible TTL families. The input can be driven from either 3.3 V or 5 V devices. This feature allows the use of this device in a mixed 3.3 V and 5 V environment. The 74LVC1G14GW is fully specified for partial power-down applications using Ioff. The Ioff circuitry disables the output, preventing the damaging backflow current through the 74LVC1G14GW when it is powered down.
Parametrics
74LVC1G14GW absolute maximum ratings: (1)supply voltage: -0.5 to +6.5 V; (2)input diode current: VI <0V: -50 mA; (3)input voltage: -0.5 to +6.5 V; (4)output diode current: VO >VCC or VO <0V: ±50 mA; (5)output voltage: active mode: -0.5 to VCC + 0.5 V, Power-down mode: -0.5 to +6.5 V; (6)output source or sink current: VO =0V to VCC:±50 mA; (7)VCC or GND current:±100 mA; (8)storage temperature: -65 to +150 °C; (9)power dissipation: Tamb = -40 °C to +125 °C: 250 mW.
Features
74LVC1G14GW features: (1)Wide supply voltage range from 1.65 V to 5.5 V; (2)High noise immunity; (3)Complies with JEDEC standard: JESD8-7 (1.65 V to 1.95 V), JESD8-5 (2.3 V to 2.7 V), JESD8B/JESD36 (2.7 V to 3.6 V); (4)±24 mA output drive (VCC = 3.0 V); (5)CMOS low power consumption; (6)Latch-up performance exceeds 250 mA; (7)Direct interface with TTL levels; (8)Unlimited rise and fall times; (9)Input accepts voltages up to 5 V; (10)Multiple package options; (11)ESD protection: HBM EIA/JESD22-A114-B exceeds 2000 V, MM EIA/JESD22-A115-A exceeds 200 V; (12)Specified from -40 °C to +85 °C and -40 °C to +125 °C.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 74LVC1G14GW,125 |
NXP Semiconductors |
Inverters SCHMITT-TRG INVERTER PICOGATE |
Data Sheet |
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74LVC1G14GW,165 |
NXP Semiconductors |
Inverters SINGLE SCHMTT TRIGG |
Data Sheet |
Negotiable |
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74LVC1G14GW-R |
NXP Semiconductors |
Inverters SINGLE SCHMTT TRIGG INVERTER |
Data Sheet |
Negotiable |
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